A next generation CMOS-compatible GaN-on-Si transistors for high efficiency energy systems

K.-Y. Roy Wong; M.-H. Kwan; F.-W. Yao; M.-W. Tsai; Y.-S. Lin; Y.-C. Chang; P.-C. Chen; R.-Y. Su; J.-L. Yu; F.-J. Yang; G.P. Lansbergen; C.-W. Hsiung; Y.-A. Lai; K.-L. Chiu; C.F. Chen; M.-C. Lin; H.-Y. Wu; C.-H. Chiang; S.-D. Liu; H.-C. Chiu; P.-C. Liu; C.-M. Chen; C.-Y. Yu; C.-S. Tsai; C.-B. Wu; B. Lin; M.-H. Chang; J.-S. You; S.-P. Wang; L.-C. Chen; Y.-Y. Liao; L.Y. Tsai; Tom Tsai; H.C. Tuan; Alex Kalnitsky

doi:10.1109/IEDM.2015.7409663

Conference paper

A next generation CMOS-compatible GaN-on-Si transistors for high efficiency energy systems

K.-Y. Roy Wong, M.-H. Kwan, F.-W. Yao, M.-W. Tsai, Y.-S. Lin, Y.-C. Chang, P.-C. Chen, R.-Y. Su, J.-L. Yu, F.-J. Yang, …

Technical Digest - International Electron Devices Meeting, IEDM, Vol.2016-February, pp.9.5.1-9.5.4

02/2015

DOI: https://doi.org/10.1109/IEDM.2015.7409663

Appears in keyword about Physics

Abstract

Electronic

Optical and Magnetic Materials

Condensed Matter Physics

Electrical and Electronic Engineering

Materials Chemistry

CMOS-compatible 100 V/650 V enhancement-mode high electron mobility transistors (E-HEMTs) and 650 V depletion-mode MISFET (D-MISFET) are fabricated on 6-inch GaN-on-Si wafers. These devices show excellent power converter switching performances. Both 100 V and 650 V E-HEMTs had passed industrial reliability qualifications. The importance of bulk leakage, interface quality and gate trapping in dynamic on-resistance is figured out. The device with optimized processes shows a significant reduction of the dynamic on-resistance degradation.

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Title: A next generation CMOS-compatible GaN-on-Si transistors for high efficiency energy systems
Translated title: A next generation CMOS-compatible GaN-on-Si transistors for high efficiency energy systems
Creators - without role: K.-Y. Roy Wong - RF and Specialty Technology Division , TSMC
M.-H. Kwan - Taiwan Semiconductor Manufacturing Company (Taiwan)
F.-W. Yao - Taiwan Semiconductor Manufacturing Company (Taiwan)
M.-W. Tsai - RF and Specialty Technology Division , TSMC
Y.-S. Lin - RF and Specialty Technology Division , TSMC
Y.-C. Chang - RF and Specialty Technology Division , TSMC
P.-C. Chen - Taiwan Semiconductor Manufacturing Company (Taiwan)
R.-Y. Su - Taiwan Semiconductor Manufacturing Company (Taiwan)
J.-L. Yu - Taiwan Semiconductor Manufacturing Company (Taiwan)
F.-J. Yang - Taiwan Semiconductor Manufacturing Company (Taiwan)
G.P. Lansbergen - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.-W. Hsiung - Taiwan Semiconductor Manufacturing Company (Taiwan)
Y.-A. Lai - RF and Specialty Technology Division , TSMC
K.-L. Chiu - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.F. Chen - Taiwan Semiconductor Manufacturing Company (Taiwan)
M.-C. Lin - Taiwan Semiconductor Manufacturing Company (Taiwan)
H.-Y. Wu - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.-H. Chiang - Taiwan Semiconductor Manufacturing Company (Taiwan)
S.-D. Liu - Taiwan Semiconductor Manufacturing Company (Taiwan)
H.-C. Chiu - Taiwan Semiconductor Manufacturing Company (Taiwan)
P.-C. Liu - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.-M. Chen - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.-Y. Yu - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.-S. Tsai - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.-B. Wu - RF and Specialty Technology Division , TSMC
B. Lin - Taiwan Semiconductor Manufacturing Company (Taiwan)
M.-H. Chang - Taiwan Semiconductor Manufacturing Company (Taiwan)
J.-S. You - Taiwan Semiconductor Manufacturing Company (Taiwan)
S.-P. Wang - Taiwan Semiconductor Manufacturing Company (Taiwan)
L.-C. Chen - Taiwan Semiconductor Manufacturing Company (Taiwan)
Y.-Y. Liao - Taiwan Semiconductor Manufacturing Company (Taiwan)
L.Y. Tsai - RF and Specialty Technology Division , TSMC
Tom Tsai - Taiwan Semiconductor Manufacturing Company (Taiwan)
H.C. Tuan - Taiwan Semiconductor Manufacturing Company (Taiwan)
Alex Kalnitsky - Taiwan Semiconductor Manufacturing Company (Taiwan)
Publication Details: Technical Digest - International Electron Devices Meeting, IEDM, Vol.2016-February, pp.9.5.1-9.5.4
Identifiers: 9781467398930; 9957772801406774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper

A next generation CMOS-compatible GaN-on-Si transistors for high efficiency energy systems

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