A novel detection of non-nucleoside reverse transcriptase inhibitors (NNRTIs) for HIV-1 with AlGaN/GaN high! electron mobility transistors

As acquired immunodeficiency syndrome (AIDS) caused by HIV-1 (human immunodeficiency virus type 1) has been in the top 10 leading causes of death for recent years, there have been many promising treatment discovered. One of the treatments is by taking non-nucleoside reverse transcriptase inhibitors (NNRTI) to suppress the activity of the HIV-1. The binding affinity of NNRTI to the reverse transcriptase (RT) of HIV-1 is an important factor determining the efficiency of the drug performance. The HIV-1 RT immobilized AlGaN/GaN high electron mobility transistors (HEMTs) were used to find the dissociation constant of NNRTIs. Comparing to conventional drug analyzing, HEMTs assisting experiments are much faster in processing time and lower cost. © The Electrochemical Society.