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A novel double-side CMOS-MEMS post processing for monolithic sensor integration
Conference paper

A novel double-side CMOS-MEMS post processing for monolithic sensor integration

Chih-Ming Sun, Chuanwei Wang, Ming-Han Tsai, H-Shen Hsie and Weileun Fang
Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), pp.90-93
2008

Abstract

This study presents a novel double-side CMOS post-process to monolithically integrate various capacitance type CMOS sensors on a single chip. In applications, the pressure sensor and linear accelerometer have been realized and monolithic integrated using the TSMC 2P4M process and the present post-process. The measurement results show that sensitivities (non-linearity) of the pressure sensor and the accelerometer are 12mV/kPa (4.77%), and 3.9mV/G (1.06%), respectively. The measurement ranges are 0-10kPa, and 0.3-6G, respectively. ©2008 IEEE.

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