Abstract
Traditional heterogeneous integrated package structure actually uses several complete IC packages, while the final heterogeneous integrated package structure is completed by restacking and packaging of various IC packages. However, the relatively large package volume, low-density interconnections and low circuit density cannot meet the demand for lighter products. There are still many issues remained in the heterogeneous integration process due to the fact that each chip has its own chip size, material properties, and device type. In order to integrate various heterogeneous chips, a new chip stacking technology is necessary to simplify and reduce the packaging structure, which is used for multi-chip and multi-layer heterogeneous integrated packaging structures as well as obtaining high performance and high bandwidth density. A novel EIC (Embedded interposer carrier) heterogeneous integrated packaging technology is developed to provide SOC-like multi-layer and multi-chip stacking capabilities, which is similar to chiplet concept. In this work, a 21-mm x 14-mm interposer is embedded into an electric package, allowing the interposer to work as a bridge between the two chips, and to provide high-density and high-pin-count interconnects. The external dimension of these two chips is 9 mm x 9 mm and the chip thickness ŪŴ 100Pm. The electrical performance including the power integrity/signal integrity analysis was evaluated by designed test patterns. Daisy chain and Kelvin structure were also included in the testing structure. This new packaging structure is compatible with fan-out packaging technology and enables integration for different chips in order to achieve performance related to 3D IC with a low cost.