A novel self-aligned shallow trench isolation cell for 90nm 4Gbit NAND flash EEPROM s

Masayuki Ichige; Yuji Takeuchi; Kikuko Sugimae; Atsuhiro Sato; Michiharu Matsui; Takeshi Kamigaichi; Hiroyuki Kutsukake; Yutaka Ishibashi; Masanobu Saito; Seiichi Mori; Hisataka Meguro; Shoichi Miyazaki; Tadashi Miwa; Shinya Takahashi; Tadashi Iguchi; Naoto Kawai; Susumu Tamon; Norihisa Arai; Hideyuki Kamata; Toshifumi Minami; Hirohisa Iizuka; Masaaki Higashitani; Tuan Pham; Gertjan Hemink; Masaki Momodomi; Riichiro Shirota

Conference paper

A novel self-aligned shallow trench isolation cell for 90nm 4Gbit NAND flash EEPROM s

Masayuki Ichige, Yuji Takeuchi, Kikuko Sugimae, Atsuhiro Sato, Michiharu Matsui, Takeshi Kamigaichi, Hiroyuki Kutsukake, Yutaka Ishibashi, Masanobu Saito, Seiichi Mori, …

Digest of Technical Papers - Symposium on VLSI Technology, pp.89-90

2003

Abstract

Electrical and Electronic Engineering

A new self-aligned shallow trench isolation cell for 90 nm 4 Gbit NAND flash EEPROMs was discussed. Shallow trench isolation (STI) which is used to reduce memory cell size was also studied. It was found that this technology can be applied to 2 Gbit binary and 4 Gbit multi level memory cells.

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Title: A novel self-aligned shallow trench isolation cell for 90nm 4Gbit NAND flash EEPROM s
Translated title: A novel self-aligned shallow trench isolation cell for 90nm 4Gbit NAND flash EEPROM s
Creators - without role: Masayuki Ichige - SoC R and D Center , Semiconductor Company , Toshiba Corp.
Yuji Takeuchi - SoC R and D Center , Semiconductor Company , Toshiba Corp.
Kikuko Sugimae - SoC R and D Center , Semiconductor Company , Toshiba Corp.
Atsuhiro Sato - SoC R and D Center , Semiconductor Company , Toshiba Corp.
Michiharu Matsui - SoC R and D Center , Semiconductor Company , Toshiba Corp.
Takeshi Kamigaichi - SoC R and D Center , Semiconductor Company , Toshiba Corp.
Hiroyuki Kutsukake - SoC R and D Center , Semiconductor Company , Toshiba Corp.
Yutaka Ishibashi - SoC R and D Center , Semiconductor Company , Toshiba Corp.
Masanobu Saito - SoC R and D Center , Semiconductor Company , Toshiba Corp.
Seiichi Mori - SoC R and D Center , Semiconductor Company , Toshiba Corp.
Hisataka Meguro - SoC R and D Center , Semiconductor Company , Toshiba Corp.
Shoichi Miyazaki - SoC R and D Center , Semiconductor Company , Toshiba Corp.
Tadashi Miwa - SoC R and D Center , Semiconductor Company , Toshiba Corp.
Shinya Takahashi - SoC R and D Center , Semiconductor Company , Toshiba Corp.
Tadashi Iguchi - SoC R and D Center , Semiconductor Company , Toshiba Corp.
Naoto Kawai - SoC R and D Center , Semiconductor Company , Toshiba Corp.
Susumu Tamon - SoC R and D Center , Semiconductor Company , Toshiba Corp.
Norihisa Arai - SoC R and D Center , Semiconductor Company , Toshiba Corp.
Hideyuki Kamata - SoC R and D Center , Semiconductor Company , Toshiba Corp.
Toshifumi Minami - SoC R and D Center , Semiconductor Company , Toshiba Corp.
Hirohisa Iizuka - SoC R and D Center , Semiconductor Company , Toshiba Corp.
Masaaki Higashitani - SanDisk Corporation
Tuan Pham - SanDisk Corporation
Gertjan Hemink - SanDisk Corporation
Masaki Momodomi - SoC R and D Center , Semiconductor Company , Toshiba Corp.
Riichiro Shirota - SoC R and D Center , Semiconductor Company , Toshiba Corp.
Identifiers: 9957774943906774
Academic Unit: College of Semiconductor Research, National Tsing Hua University
Language: English
Resource Type: Conference paper
Publication Details: Digest of Technical Papers - Symposium on VLSI Technology, pp.89-90

A novel self-aligned shallow trench isolation cell for 90nm 4Gbit NAND flash EEPROM s

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