A pseudomorphic AlGaAs/InGaAs/GaAs MODFET-based optoelectronic receiver with a 10 GHz bandwidth

I. Adesida; A. Ketterson; J. -W. Seo; M. Tong; K. Nummila.; D. Ballageer; K. Y. Cheng; S. -M. Kang

doi:10.1109/LEOSST.1992.697452

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Conference paper

A pseudomorphic AlGaAs/InGaAs/GaAs MODFET-based optoelectronic receiver with a 10 GHz bandwidth

I. Adesida, A. Ketterson, J. -W. Seo, M. Tong, K. Nummila., D. Ballageer, K. Y. Cheng and S. -M. Kang

IEEE Xplore Digital Library LEOS Summer Topical Meeting on Integrated Optoelectronics, p.B29

1992

DOI: https://doi.org/10.1109/LEOSST.1992.697452

Abstract

Indium gallium arsenide;Gallium arsenide;MODFETs;HEMTs;Bandwidth;Optical receivers;Electrons;Semiconductor device noise;Passivation;Optical amplifiers

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Title: A pseudomorphic AlGaAs/InGaAs/GaAs MODFET-based optoelectronic receiver with a 10 GHz bandwidth
Creators - without role: I. Adesida
A. Ketterson - University of Illinois Urbana-Champaign
J. -W. Seo - University of Illinois Urbana-Champaign
M. Tong - University of Illinois Urbana-Champaign
K. Nummila.
D. Ballageer
K. Y. Cheng - University of Illinois Urbana-Champaign
S. -M. Kang - University of Illinois Urbana-Champaign
Publication Details: IEEE Xplore Digital Library LEOS Summer Topical Meeting on Integrated Optoelectronics, p.B29
Identifiers: 9957767023306774
Academic Unit: National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper

A pseudomorphic AlGaAs/InGaAs/GaAs MODFET-based optoelectronic receiver with a 10 GHz bandwidth

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