Abstract
A reliable CMOS-MEMS platform for on-chip resonant transducer and readout circuit integration is presented in this paper with (i) well-defined etch stops and relaxed release windows for high fabrication yield, (ii) narrow transducer gaps (< 400nm) for efficient electrostatic transduction, and (iii) novel titanium nitride composite (TiN-C) structure for dielectric charge elimination and temperature compensation. With the proposed platform, MEMS resonant transducers which exhibit low frequency drift over temperature and time, excellent electrostatic coupling, and inherent CMOS circuit integration are successfully demonstrated.