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A ring-down technique implemented in CMOS-MEMS resonator circuits for wide-range pressure sensing applications
Conference paper

A ring-down technique implemented in CMOS-MEMS resonator circuits for wide-range pressure sensing applications

Wan-Cheng Chiu, Chin-Yu Chou, Ming-Huang Li and Sheng-Shian Li
2016 IEEE International Frequency Control Symposium, IFCS 2016 - Proceedings, 7563594
16/08/2016

Abstract

CMOS;MEMS;pressure sensing;resonators;ring-down;wide-range Computer Networks and Communications,Instrumentation
In this work, a 1.2-MHz CMOS-MEMS DETF (double-ended tuning fork) resonator with its on-chip tunable transimpedance amplifier (TIA) is designed to measure the ring-down response of the resonator circuit for pressure sensing applications. From the time-domain ring-down waveform, the frequency and quality factor of the resonator circuit can be extracted corresponding to its environmental pressure. Due to the effect of the squeezed-film damping caused by environmental pressure, the quality factor would change accordingly, thus affecting the waveform of the ring-down characteristic. By measuring the ring-down response under various pressure levels, the designed resonator circuit features a wide pressure sensing range from 0.8 Torr to 220 Torr.

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