Abstract
We introduce a simple and low cost method to synthesize a transparent In-Ga-Zn-Oxide (IGZO) nano-particle solution. A thin film transistor with the active layer of IGZO is fabricated by the spin coating process. The transmittance of the film exceeds 80% in visible region. The electrical properties of TFTs with a 50pm gate width and 175pm gate length displayed a linear mobility of ∼ 1.89 cm 2 A/.s, a threshold voltage is 1.5V, a drain current is 10 -4 A when gate voltage is 15V.