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A sub-0.5V charge pump circuit for resistive RAM (ReRAM) enabled low supply voltage nonvolatile logics and nonvoaltile processors
Conference paper

A sub-0.5V charge pump circuit for resistive RAM (ReRAM) enabled low supply voltage nonvolatile logics and nonvoaltile processors

Meng-Fan Chang, Shin-Jang Shen, Yi-Lun Lu, Yih-Shan Yang, Jui-Yu Hung, Che-Wei Wu, Yan-Bing Jhang, Wei-How Chen and Han-Wen Hu
2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016, pp.342-345
12/2016
DOI: https://doi.org/10.1109/EDSSC.2016.7785278

Abstract

charge pump low-voltage memory ReRAM Electrical and Electronic Engineering Hardware and Architecture
Many processors that use energy harvesting devices for low-power computing operations and zero-standby-current power-off storage require embedded nonvolatile memory (eNVM) devices and nonvolatile logics (nvLogics) with low-voltage capability. However, conventional eNVMs and nvLogics are unable to perform low-voltage write operations due to a failure on the part of on-chip charge-pump circuits to provide the high write voltage and write current required by NVM devices under low supply voltage (VDD). This study developed hybrid-boost-voltage (HBV) and hybrid-device (HD) schemes for a single-supply charge pump to enable low-VDD operations with sufficient voltage and current for the write operation of ReRAM-based eNVM and nvLogics. A HBV-HD CP fabricated in a 65nm testchip achieved VDDmin ofless than 0.5V.

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