Accompanied Arrangement Effect of Stretched Gate Width and Dummy Diffusion Region on Strained Silicon PMOSFETs

Conference paper

C. C. Lee, C. P. Hsieh and M. H. Liao

7th IEEE International Nanoelectronics Conference (IEEE INEC2016) 7th IEEE International Nanoelectronics Conference (IEEE INEC2016)

2016

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Title: Accompanied Arrangement Effect of Stretched Gate Width and Dummy Diffusion Region on Strained Silicon PMOSFETs
Creators - without role: C. C. Lee - 國立清華大學工學院動力機械工程學系
C. P. Hsieh
M. H. Liao
Identifiers: 9957772274406774
Academic Unit: Department of Power Mechanical Engineering, College of Engineering, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper
Publication Details: 7th IEEE International Nanoelectronics Conference (IEEE INEC2016) 7th IEEE International Nanoelectronics Conference (IEEE INEC2016)