Abstract
The authors describe a novel accurate model and numerical analysis of subbreakdown phenomena due to band-to-band tunneling in a thin-gate-oxide n-MOSFET. Subbreakdown I-V characteristics are calculated for various oxide thicknesses. The results agree with experimental results over a wide range of subbreakdown current from 10 -12 A to 10 -6 A. The numerical analysis based on this model has been utilized to suppress the subbreakdown current. It is concluded that the model can be utilized for the design of thin-gate-oxide devices.