Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs

Conference paper

J.-S. Wang, William P. N. Chen, C.-H. Shih, C. Lien, Pin Su, Y.-M. Sheu, Donald Y.-S. Chao and K. Goto

International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 4239532

2007

Abstract

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Title: Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs
Creators - without role: J.-S. Wang - Taiwan Semiconductor Manufacturing Company (Taiwan)
William P. N. Chen - National Yang Ming Chiao Tung University
C.-H. Shih - Yuan Ze University
C. Lien - National Yang Ming Chiao Tung University
Pin Su - Yuan Ze University
Y.-M. Sheu - Taiwan Semiconductor Manufacturing Company (Taiwan)
Donald Y.-S. Chao - Taiwan Semiconductor Manufacturing Company (Taiwan)
K. Goto - Taiwan Semiconductor Manufacturing Company (Taiwan)
Publication Details: International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 4239532
Identifiers: 1424405858; 9781424405855; 9957768436206774
Academic Unit: College of Electrical Engineering and Computer Science, National Tsing Hua University; National Tsing Hua University
Language: English
Resource Type: Conference paper