Abstract
CMOS-compatible GaN-on-silicon technology with excellent D-mode MISHFET performance is realized. A low specific contact resistance R c (0.35 Ω-mm) is achieved by Au-free process. MIS-HFET with a gate-drain distance (L GD ) of 15 μm exhibits a large breakdown voltage (BV) (980 V with grounded substrate) and a low specific on-resistance (R ON , sp ) (1.45 mΩ-cm 2 ). The importance of epitaxial quality in a key industrial qualification item: high temperature gate bias (HTGB) stress-induced voltage instability issue is figured out and a breakthrough by optimizing GaN epitaxial layer for improvement of MIS-HFET is demonstrated. A low V th shift of the optimized MIS-HFET is achieved ~ 0.14V with qualification stress condition V G of -15 V at ambient temperature of 150 °C for 128 hours. © 2014 IEEE.