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An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices
Conference paper

An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices

Je-Min Hung, Yen-Hsiang Huang, Sheng-Po Huang, Fu-Chun Chang, Tai-Hao Wen, Chin-I Su, Win-San Khwa, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, …
Digest of Technical Papers - IEEE International Solid-State Circuits Conference, Vol.2022-February, pp.182-184
2022
DOI: https://doi.org/10.1109/ISSCC42614.2022.9731715

Abstract

Electronic Optical and Magnetic Materials Electrical and Electronic Engineering
Battery-powered edge-AI devices require nonvolatile computing-in-memory (nvCIM) macros for nonvolatile data storage and multiply-and-accumulate (MAC) operations. High inference accuracy requires MAC operations with high input (IN), weight (W), and output (OUT) precisions. A high energy efficiency (EF_MAC) and a short computing latency (t_AC) are also required. Most existing silicon-verified nvCIM macros use current-mode signal generation; using current [1]-[3] or hybrid current-voltage readout schemes [4]-[5] for multibit MAC operations to compensate for the small BL -voltage swing and signal margin resulting from the low read-disturb-free voltage (V_RD).

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