Abstract
This work presents the design and characterization of an integrated CMOS (complementary metal oxide semiconductor) electrochemical sensor array for dopamine (DA) detection. The chip is intended to provide as a platform for high-throughput measurement of neurotransmitter release during exocytosis. Interdigitated gold microelectrodes with a 5-μm gap are fabricated on CMOS chips by a post-CMOS lithographic process. A buffer with a class-AB output stage is used for on-chip cell stimulation. The sensing circuits are placed beneath the microelectrodes and each sensor has a size of 160 × 150 μm 2 . Both reduction and oxidation currents are successfully detected under a dopamine concentration of 10 μM. © 2011 IEEE.