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An Investigation of Plasma Charging Effect on FinFET Front-End-of-Line Processes
Conference paper

An Investigation of Plasma Charging Effect on FinFET Front-End-of-Line Processes

Kai-Wei Yang, Yi-Jie Chao, Jiaw-Ren Shih, Chrong-Jung Lin and Ya-Chin King
6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, pp.384-386
2022
DOI: https://doi.org/10.1109/EDTM53872.2022.9798005
Appears in  keyword about Chemistry

Abstract

FinFET Floating gate Plasma induced damage Process Chemistry and Technology Hardware and Architecture Electrical and Electronic Engineering Industrial and Manufacturing Engineering Electronic Optical and Magnetic Materials
This work investigates plasma induced charging effect on FinFET front-end-of-line (FEOL) plasma processes. Based on the plasma induced damage (PID) recorder which monitors back-end-of-line (BEOL) processes, a refined version is proposed for the evaluation of PID in FEOL processes. This modified PID recorder along with systematic approaches evaluating sources of charging events during fabrication processes can provide insight into further optimization of FinFET technologies.

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