Abstract
A 4H-SiC TMBS diode with improved trench corners has been demonstrated. The trench profiles are improved by using a mixture of 12sccm/28sccm SF 6 /Ar gases, and a working pressure of 12 mtorr for RIE etching. The depth of micro-trenching has been reduced to lower than 0.07 μm. The 4H-SiC TMBS diode with improved trench profiles shows a breakdown voltage over 725V. © (2013) Trans Tech Publications, Switzerland.