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An investigation of program disturb characteristics and data pattern effect in 128G 3D NAND flash memories
Conference paper

An investigation of program disturb characteristics and data pattern effect in 128G 3D NAND flash memories

Yu-Hung Yeh, Sheng-Hung Shih, Jen-Chien Fu, Chrong-Jung Lin and Ya-Chin King
2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017, 7942496
06/2017
DOI: https://doi.org/10.1109/VLSI-TSA.2017.7942496

Abstract

Hardware and Architecture Electrical and Electronic Engineering
This work investigates program disturb characteristics on cells closely packed in three-dimensional (3D) NAND flash memories. Using firmware accessing 3D NAND chips, experimental data reveal unique behaviors on the cells susceptible to program disturb. These observations provide guidelines for future optimization in data arrangement and array operations in 3D NAND arrays.

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