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An investigation of the RF/analog characteristics of multiple variants SiGe HBTs for optical and wireless applications
Conference paper

An investigation of the RF/analog characteristics of multiple variants SiGe HBTs for optical and wireless applications

M.T. Yang, Darryl C. W. Kuo, Patricia P. C. Ho, C.W. Kuo, T.J. Yen, Alan K. L. Chang, C.Y. Lee, Y.T. Chia, G.J. Chern, K.L. Young, …
Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp.88-91
2004

Abstract

Electrical and Electronic Engineering
Multiple variants of SiGe HBTs using select collector implant suitable for wired and wireless applications were explored. RF/Analog characteristics of HBTs featured with fT/BV cEo values of 130GHz/2.3V, 80GHz/3.4V and 60GHz/4.8V were characterized. The dependence of bias, temperature, frequency, noise, power, and geometry were investigated to provide designers with appropriate performance-breakdown design coverage and flexibility. © 2004 IEEE.

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