Abstract
Multiple variants of SiGe HBTs using select collector implant suitable for wired and wireless applications were explored. RF/Analog characteristics of HBTs featured with fT/BV cEo values of 130GHz/2.3V, 80GHz/3.4V and 60GHz/4.8V were characterized. The dependence of bias, temperature, frequency, noise, power, and geometry were investigated to provide designers with appropriate performance-breakdown design coverage and flexibility. © 2004 IEEE.