Abstract
The dispersion effects of transconductance (g m ) and output resistance (R ds ) in AlGaN/GaN MODFETs were investigated. The dispersion effects of g m were found to be much smaller than those of R ds . Devices under different biases show g m dispersion of ∼ 4% to 7%, while R ds dispersion of ∼ 19% to 44% in a frequency range of 50 Hz to 100 kHz. The trapping-detrapping time constants of the dispersion effects were extracted by employing a novel distributed RC network and carrier injection current sources. The time constants estimated are in a range of ∼ 1.5 μs to 1 ms.