Logo image
Back
Analytical Modelling of Ferroelectricity Instigated Enhanced Electrostatic Control in Short-Channel FinFETs
Conference paper

Analytical Modelling of Ferroelectricity Instigated Enhanced Electrostatic Control in Short-Channel FinFETs

Jhang-Yan Ciou, Sourav De, Chien-Wei Wang, Wallace Lin, Yao-Jen Lee and Darsen Lu
2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, 9420931
04/2021
DOI: https://doi.org/10.1109/EDTM50988.2021.9420931

Abstract

analytical model DIBL ferroelectric FinFET negative capacitance short channel effect subthreshold swing Electrical and Electronic Engineering Industrial and Manufacturing Engineering Electronic Optical and Magnetic Materials
This study simulated negative-capacitance double gate FinFETs with channel lengths ranging from 25 ext{nm to 100nm using TCAD. The results show that negative capacitance significantly reduces subthreshold swing as well as drain induced barrier lowering effects. The improvement is found to be significantly more prominent for short channel devices than long ones, which demonstrates the tremendous advantage of negative capacitance gate stack for scaled MOSFETs. A compact analytical formulation is developed to quantify sub-threshold swing improvement for short channel devices.

Metrics

1 Record Views

Details

Logo image