Abstract
A CMOS compatible high-voltage STI DEMOS transistor is fabricated and its electrical characteristics studied. A method is used to find the breakdown voltage of this two-dimensional STI DEMOS structure theoretically. A breakdown voltage model, which relates the breakdown voltage to the effective N well doping concentration N B and the width of the accumulation region χ a , is derived. The predictions of this model agree very well with both the experimental data and with the TCAD simulations. © 2014 IEEE.