Backilluminated InGaAs/InP p-i-n photodiodes prepared by molecular beam epitaxy

Conference paper

Backilluminated InGaAs/InP p-i-n photodiodes prepared by molecular beam epitaxy

K. Y. Cheng, A. Y. Cho, T. P. Lee, C. A. Burrus and D. D. Manchon Jr.

Device Research Conference

1980

Abstract

Backilluminated;photodiodes;molecular beam epitaxy

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Title: Backilluminated InGaAs/InP p-i-n photodiodes prepared by molecular beam epitaxy
Creators - without role: K. Y. Cheng
A. Y. Cho
T. P. Lee
C. A. Burrus
D. D. Manchon Jr.
Identifiers: 9957772667906774
Academic Unit: National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper
Publication Details: Device Research Conference