Bending Stress Effect of Extended Poly Gate on the Performance of Nanoscale Strained PMOSFETs

Conference paper

C. C. Lee, C. H. Liu, M. H. Hung, R. H. Deng and C. S. Wu

10th International Nanotech Symposium & Exhibition (NANO KOREA 2012) 10th International Nanotech Symposium & Exhibition (NANO KOREA 2012)

2012

Metrics

1 Record Views

Title: Bending Stress Effect of Extended Poly Gate on the Performance of Nanoscale Strained PMOSFETs
Creators - without role: C. C. Lee - 國立清華大學工學院動力機械工程學系
C. H. Liu
M. H. Hung
R. H. Deng
C. S. Wu
Publication Details: 10th International Nanotech Symposium & Exhibition (NANO KOREA 2012) 10th International Nanotech Symposium & Exhibition (NANO KOREA 2012)
Identifiers: 9957771637106774
Academic Unit: Department of Power Mechanical Engineering, College of Engineering, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper