Abstract
Amorphous silicon was crystallized using a blue ultrafast Ti:Sapphire laser system. Polysilicon with average grain size of 280 nm was achieved with fluence 30 of mJ/cm 2 and overlapping of 93.75% at room temperature.
- Title
- Blue Femtosecond Laser-Induced Crystallization of Amorphous Silicon
- Translated title
- Blue Femtosecond Laser-Induced Crystallization of Amorphous Silicon
- Creators - without role
- Kuan-Wen Chen - Institute of Electro-Optical Engineering , National Chiao Tung UniversityYi-Chao Wang - Institute of Electro-Optical Engineering , National Chiao Tung UniversityShih-Hsuan Kao - Institute of Photonics Technologies , National Tsing Hua UniversityPo-Hsun Wu - Institute of Photonics Technologies , National Tsing Hua UniversityCi-Ling Pan - Institute of Photonics Technologies , National Tsing Hua University
- Publication Details
- Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol.2020-May, 9193772
- Identifiers
- 9781943580767; 9957771847106774
- Copyright
- © 2020 OSA.
- Academic Unit
- National Tsing Hua University
- Language
- English
- Resource Type
- Conference paper