Abstract
Amorphous silicon was crystallized using a blue ultrafast Ti:Sapphire laser system. Polysilicon with average grain size of 280 nm was achieved with fluence 30 of mJ/cm 2 and overlapping of 93.75% at room temperature.
- Title
- Blue femtosecond laser-induced crystallization of amorphous silicon
- Translated title
- Blue femtosecond laser-induced crystallization of amorphous silicon
- Creators - without role
- Kuan-Wen Chen - Institute of Electro-Optical Engineering , National Chiao Tung UniversityYi-Chao Wang - Institute of Electro-Optical Engineering , National Chiao Tung UniversityShih-Hsuan Kao - National Tsing Hua UniversityPo-Hsun Wu - National Tsing Hua UniversityCi-Ling Pan - Institute of Photonics Technologies , National Tsing Hua University
- Publication Details
- Optics InfoBase Conference Papers, Vol.Part F181-CLEO-AT 2020, JTu2B.9
- Identifiers
- 9781557528209; 9957771669106774
- Copyright
- © OSA 2020 © 2020 The Author(s).
- Academic Unit
- National Tsing Hua University
- Language
- English
- Resource Type
- Conference paper