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Bottom contact organic thin-film transistors with thiol-based SAM treatment
Conference paper

Bottom contact organic thin-film transistors with thiol-based SAM treatment

Masahiro Kawasaki, Shuji Imazeki, Masahiko Ando and M. Ohe
Proceedings - Electrochemical Society, Vol.PV 2004-15, pp.249-256
2005

Abstract

Engineering (all)
We report on a thiol-based self-assembled monolayer treatment of the source/drain electrodes to improve the characteristics of an organic thin-film transistor with a bottom-contact configuration. With the treatment of immersing the substrate in octadecanethiol solution for 1 minute, the field effect mobility increases by 25% and the off current decreases about one order of magnitude compared to that without the treatment. It has been confirmed that thiol molecules absorbs in lying-down phase on the source/drain electrodes. A self-assembled monolayer in lying-down phase between the electrodes and a semiconductor plays an important role to reduce resistance at the interface without increase of the Schottky and tunneling barrier height.

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