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Bulk-Si with poly bump process scheme for MEMS sensors
Conference paper

Bulk-Si with poly bump process scheme for MEMS sensors

Chun-Wen Cheng, Kai-Chih Liang, Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Chung-Hsien Lin, Hsiao Chin Tuan, Alex Kalnitsky, Weileun Fang and David A. Horsley
Proceedings of IEEE Sensors, 6411212
2012

Abstract

A MEMS process scheme designed for multi- sensors is presented. This new process scheme includes a poly bump not only provides stiction prevention and gap control function, and also electrical connection between MEMS structure and routing lines. Another advantage for this scheme is a better vacuum level because all material can be high temperature annealed before final encapsulation. This study also demonstrated some MEMS devices using this new scheme, including resonators, accelerometers and magnetometers. © 2012 IEEE.

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