CMOS-Friendly Doping Strategies for p-Type WSe2 Field-Effect Transistors

Cheng-Chieh Hsieh; I-Ling Li; Cheng-Yang Hsu; Han-Hsiang Pai; Tsung-Che Hsieh; Hung-Hui Yang; Chien-Wei Chen; Chih-Chao Yang; Ying Hao Chu; Chao-Hui Yeh

doi:10.7567/ssdm.2025.a-7-03

會議論文

CMOS-Friendly Doping Strategies for p-Type WSe2 Field-Effect Transistors

Cheng-Chieh Hsieh, I-Ling Li, Cheng-Yang Hsu, Han-Hsiang Pai, Tsung-Che Hsieh, Hung-Hui Yang, Chien-Wei Chen, Chih-Chao Yang, Ying Hao Chu 和 Chao-Hui Yeh

2025 International Conference on Solid State Devices and Materials (Japan, 15/09/2025–18/09/2025)

18/09/2025

DOI: https://doi.org/10.7567/ssdm.2025.a-7-03

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題名: CMOS-Friendly Doping Strategies for p-Type WSe2 Field-Effect Transistors
研究創作者-僅顯示姓名: Cheng-Chieh Hsieh
I-Ling Li
Cheng-Yang Hsu
Han-Hsiang Pai
Tsung-Che Hsieh
Hung-Hui Yang
Chien-Wei Chen
Chih-Chao Yang
Ying Hao Chu
Chao-Hui Yeh
會議: 2025 International Conference on Solid State Devices and Materials (Japan, 15/09/2025–18/09/2025)
總頁數: 2
學術資源類型: 會議論文

CMOS-Friendly Doping Strategies for p-Type WSe2 Field-Effect Transistors

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