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CMOS Ion Sensitive Field Effect Transistors for Detection of DNA Hybridization under Debye Screen Effect
Conference paper

CMOS Ion Sensitive Field Effect Transistors for Detection of DNA Hybridization under Debye Screen Effect

Chieh Lee and Michael S.-C. Lu
Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Vol.2020-January, pp.299-302
01/2020
DOI: https://doi.org/10.1109/MEMS46641.2020.9056272
Appears in  keyword about Physics

Abstract

CMOS Debye length DNA electrical double layer ISFET Electronic Optical and Magnetic Materials Condensed Matter Physics Mechanical Engineering Electrical and Electronic Engineering
Label-free biological detection using ion sensitive field effect transistors (ISFET) in high ionic strength solution is known hampered by the charge-screening effect of the electrical double layer. Our study adopts a detection scheme with CMOS (complementary metal oxide semiconductor) ISFETs operated at frequencies higher than the ion-strength-dependent cut-off frequency. Measured results show a high pH sensitivity of more than 50 mV/pH; in addition, detection of direct DNA hybridization under high ionic strength is also successfully demonstrated in this study.

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