CMOS-compatible GaN-on-Si field-effect transistors for high voltage power applications

Man Ho Kwan; K.-Y. Wong; Y.S. Lin; F.W. Yao; M.W. Tsai; Y.-C. Chang; P.C. Chen; R.Y. Su; C.-H. Wu; J.L. Yu; F.J. Yang; G.P. Lansbergen; H.-Y. Wu; M.-C. Lin; C.B. Wu; Y.-A. Lai; C.-W. Hsiung; P.-C. Liu; H.-C. Chiu; C.-M. Chen; C.Y. Yu; H.S. Lin; M.-H. Chang; S.-P. Wang; L.C. Chen; J.L. Tsai; H.C. Tuan; Alex Kalnitsky

doi:10.1109/IEDM.2014.7047073

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Conference paper

CMOS-compatible GaN-on-Si field-effect transistors for high voltage power applications

Man Ho Kwan, K.-Y. Wong, Y.S. Lin, F.W. Yao, M.W. Tsai, Y.-C. Chang, P.C. Chen, R.Y. Su, C.-H. Wu, J.L. Yu, …

Technical Digest - International Electron Devices Meeting, IEDM, Vol.2015-February(February), pp.17.6.1-17.6.4

02/2015

DOI: https://doi.org/10.1109/IEDM.2014.7047073

Appears in keyword about Physics

Abstract

Electronic

Optical and Magnetic Materials

Condensed Matter Physics

Electrical and Electronic Engineering

Materials Chemistry

CMOS-compatible 100/650 V enhancement-mode FETs and 650 V depletion-mode MISFETs are fabricated on 6-inch AlGaN/GaN-on-Si wafers. They show high breakdown voltage and low specific on-resistance with good wafer uniformity. The importance of epitaxial quality is figured out in a key industrial item: high-temperature-reverse-bias-stress-induced on-state drain curent degradation. Optimization of epitaxial layers shows significant improvement of device reliability.

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Title: CMOS-compatible GaN-on-Si field-effect transistors for high voltage power applications
Translated title: CMOS-compatible GaN-on-Si field-effect transistors for high voltage power applications
Creators - without role: Man Ho Kwan - Taiwan Semiconductor Manufacturing Company (Taiwan)
K.-Y. Wong - Taiwan Semiconductor Manufacturing Company (Taiwan)
Y.S. Lin - Taiwan Semiconductor Manufacturing Company (United States)
F.W. Yao - Taiwan Semiconductor Manufacturing Company (Taiwan)
M.W. Tsai - Analog Devices (United States)
Y.-C. Chang - Analog Devices (United States)
P.C. Chen - Analog Devices (United States)
R.Y. Su - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.-H. Wu - Taiwan Semiconductor Manufacturing Company (United States)
J.L. Yu - Taiwan Semiconductor Manufacturing Company (Taiwan)
F.J. Yang - Taiwan Semiconductor Manufacturing Company (United States)
G.P. Lansbergen - Taiwan Semiconductor Manufacturing Company (Taiwan)
H.-Y. Wu - Taiwan Semiconductor Manufacturing Company (United States)
M.-C. Lin - Taiwan Semiconductor Manufacturing Company (United States)
C.B. Wu - Taiwan Semiconductor Manufacturing Company (Taiwan)
Y.-A. Lai - Analog Devices (United States)
C.-W. Hsiung - Taiwan Semiconductor Manufacturing Company (United States)
P.-C. Liu - Taiwan Semiconductor Manufacturing Company (United States)
H.-C. Chiu - Taiwan Semiconductor Manufacturing Company (United States)
C.-M. Chen - Taiwan Semiconductor Manufacturing Company (United States)
C.Y. Yu - Analog Devices (United States)
H.S. Lin - Taiwan Semiconductor Manufacturing Company (Taiwan)
M.-H. Chang - Taiwan Semiconductor Manufacturing Company (United States)
S.-P. Wang - Taiwan Semiconductor Manufacturing Company (Taiwan)
L.C. Chen - Taiwan Semiconductor Manufacturing Company (Taiwan)
J.L. Tsai - Analog Devices (United States)
H.C. Tuan - Taiwan Semiconductor Manufacturing Company (Taiwan)
Alex Kalnitsky - Taiwan Semiconductor Manufacturing Company (Taiwan)
Publication Details: Technical Digest - International Electron Devices Meeting, IEDM, Vol.2015-February(February), pp.17.6.1-17.6.4
Identifiers: 9781479980017; 9957771315006774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper

CMOS-compatible GaN-on-Si field-effect transistors for high voltage power applications

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