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CMOS integrated cantilevers with sub-μm tips for thermal sensing
Conference paper

CMOS integrated cantilevers with sub-μm tips for thermal sensing

Chi-Pei Wu, Hong-Da Dai, Sidney S. Yang, Shi-Jie Hung, Cheng-Ting Tu, Da-Jen Yao and Michael S.-C. Lu
3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS, pp.164-169
2008

Abstract

Cantilever CMOS Piezoresistive Thermocouple Tip
This work presents the CMOS micromachined dielectric cantilevers with integrated sharp tips for surface temperature measurement. The integrated cantilever can perform electrothermal actuation and piezoresistive sensing for maintaining a proper tip-sample contact. For the cantilever of 280-μm long, the measured thermoelectric power from the aluminum/polysilicon thermocouple is 22.6±0.36 μV/°C, the measured time constant is 796 μs, and the drift due to thermal actuation is 0.15±0.057 μV/°C. The measured displacement by thermal actuation is 2.2 μm at 17.8 mW and the measured thermal time constant is 79.6 μs. The measured piezoresistive sensitivity and pre-amp noise are 0.48 mV/μm and 0.7 μV/Hz 1/2 , respectively, producing an equivalent input-referred noise displacement of 1.45 nm/Hz 1/2 . © 2008 IEEE.

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