Abstract
Oxygen Implanted GaAs was used for terahertz wave emitter fabrication. CW Terahertz waves are measured from this kind of material. We take sampling in the range of 0.25 to 0.5 THz. The measured output power is in ten nW range.
- Title
- CW sub-terahertz wave generation by GaAs:O materials
- Creators - without role
- Kejian Chen - Chinese University of Hong KongYutai Li - National Yang Ming Chiao Tung UniversityWingYiu Cheung - Chinese University of Hong KongWeiwen Wang - National Yang Ming Chiao Tung UniversityCiLing Pan - Department of Photonics , Institute of Electro-Optical Engineering , National Chiao Tung UniversityKam Tai Chan - Chinese University of Hong Kong
- Identifiers
- 1424411734; 9781424411733; 9957768229206774
- Academic Unit
- National Tsing Hua University
- Language
- English
- Resource Type
- Conference paper
- Publication Details
- Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 4391124