Carrier Backscattering Characteristics of Nanoscale Strained CMOS Devices Featuring the Optimal Stress Engineering

Conference paper

B. F. Hsieh, S. T. Chang, C. C. Lee, J. Huang and W. C. Wang

1st International Conference on nanoManufacturing (nanoMan2008) 1st International Conference on nanoManufacturing (nanoMan2008)

2008

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Title: Carrier Backscattering Characteristics of Nanoscale Strained CMOS Devices Featuring the Optimal Stress Engineering
Creators - without role: B. F. Hsieh
S. T. Chang
C. C. Lee - 國立清華大學工學院動力機械工程學系
J. Huang
W. C. Wang
Identifiers: 9957775249006774
Academic Unit: Department of Power Mechanical Engineering, College of Engineering, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper
Publication Details: 1st International Conference on nanoManufacturing (nanoMan2008) 1st International Conference on nanoManufacturing (nanoMan2008)