Challenges and opportunities for HfO X based resistive random access memory

Y.S. Chen; H.Y. Lee; P.S. Chen; C.H. Tsai; P.Y. Gu; T.Y. Wu; K.H. Tsai; S.S. Sheu; W.P. Lin; C.H. Lin; P.F. Chiu; W.S. Chen; F.T. Chen; C. Lien; M.-J. Tsai

doi:10.1109/IEDM.2011.6131649

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Challenges and opportunities for HfO X based resistive random access memory

Y.S. Chen, H.Y. Lee, P.S. Chen, C.H. Tsai, P.Y. Gu, T.Y. Wu, K.H. Tsai, S.S. Sheu, W.P. Lin, C.H. Lin, …

Technical Digest - International Electron Devices Meeting, IEDM, 6131649

2011

DOI: https://doi.org/10.1109/IEDM.2011.6131649

Abstract

The binary oxide based resistive memories showing superior electrical performances on the resistive switching are reviewed in this paper. The status and challenges of the HfO _X based resistive device with excellent memory properties are presented. Several future challenges for the filamentary type switching device are also addressed. © 2011 IEEE.

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Title: Challenges and opportunities for HfO X based resistive random access memory
Creators - without role: Y.S. Chen - National Tsing Hua University
H.Y. Lee - Industrial Technology Research Institute
P.S. Chen - Minghsin University of Science and Technology
C.H. Tsai - Industrial Technology Research Institute
P.Y. Gu - Industrial Technology Research Institute
T.Y. Wu - Industrial Technology Research Institute
K.H. Tsai - Industrial Technology Research Institute
S.S. Sheu - Industrial Technology Research Institute
W.P. Lin - Industrial Technology Research Institute
C.H. Lin - Industrial Technology Research Institute
P.F. Chiu - Industrial Technology Research Institute
W.S. Chen - Industrial Technology Research Institute
F.T. Chen - Industrial Technology Research Institute
C. Lien - National Tsing Hua University
M.-J. Tsai - Electronics and Optoelectronics Research Laboratory , Industrial Technology Research Institute
Publication Details: Technical Digest - International Electron Devices Meeting, IEDM, 6131649
Grant note: IEEE Electron Devices Society
Identifiers: 9781457705052; 9957769354106774
Academic Unit: College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper

Challenges and opportunities for HfO X based resistive random access memory

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