Characteristics and reliability improvement of MOS devices with integration of TiN/MoN and HfAlO dielectric

Conference paper

C. H. Fu, K. S. Chang-Liao, H. Y. Lu, C. C. Le, T. K. Wang and W. F. Wu

2010

Abstract

MOS devices;integration of TiN/MoN;HfAlO dielectric

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Title: Characteristics and reliability improvement of MOS devices with integration of TiN/MoN and HfAlO dielectric
Creators - without role: C. H. Fu
K. S. Chang-Liao
H. Y. Lu
C. C. Le
T. K. Wang
W. F. Wu - 國立清華大學原子科學院工程與系統科學系
Identifiers: 9957769326706774
Academic Unit: Department of Engineering and System Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper