Abstract
We introduce a simple and low cost method to synthesize an Indium-Gallium-Zinc Oxide (IGZO) nano-particle solution, to use the active channel IGZO layer for TFTs devices to present the optical and electrical characteristics. The transmittance of the transparent film exceeds 80% in visible region. The device exhibits electrical properties to those of TFTs, such us a higher drain current 10 -5 A when transistor turn on, the I on /I off ratio is over 10 6 , a threshold voltage is 1.5 V, and mobility is 2.3 cm 2 /Vs.