Abstract
This parametric study investigates the characteristics of ion-beam-synthesized molybdenum silicide film with various ion fluences, silicon orientations and post-annealing conditions. The implantation of molybdenum ions into silicon substrate was performed using a metal vapor vacuum arc at 40 kV, while the rapid thermal annealing method was subsequently applied to form the molybdenum silicide film. The film characteristics were determined using X-ray diffractometry, resistometry, Rutherford backscattering spectrometry, transmission electron microscopy and secondary ion mass spectrometry. The results revealed that a flat and continuous molybdenum silicide film with superior properties could be obtained when implanted at an ion fluence of 3 × 10 17 cm -2 into 〈100〉 silicon substrate at 100 °C and then rapid-thermal-annealed at a temperature greater than 800 °C for 30 s. © 2005 Elsevier B.V. All rights reserved.