Abstract
This paper deals with the characteristics of ion-beam-synthesized tantalum suicide film on different substrates as a function of annealing conditions. An implantation of 2 × 10 <sup>17</sup> 40 kV Ta ions cm <sup>-2</sup> was performed using an ion implanter of metal vapour vacuum arc. Silicon wafers of <100> and <111> orientation were chosen as representatives of different substrates. Rapid thermal annealing conditions included annealing temperatures of 550-1000 °C and annealing times of 5-90 s. Annealing-induced variations in microstructure, composition, resistivity and diffusion in the tantalum silicide film were analysed by means of x-ray diffractometry, Rutherford backscattering spectrometry, resistometry and secondary ion mass spectrometry, respectively, in order to compare the as-implanted and as-annealed specimens. The results revealed that tantalum silicide film possesses the most optimum properties when annealed at 850 °C for 30 s in both the <100> and <111> specimens. Copyright © 2005 John Wiley & Sons, Ltd.