Characterization and Modeling of 16nm FinFET 3D Stackable Via RRAM

會議論文

Characterization and Modeling of 16nm FinFET 3D Stackable Via RRAM

Wei-Hwa Lin, Tsung-Pei Yang, Kai-Ching Chuang, Howard Tseng, Tassa Yang, Sung-Po Liao, Tim Chung, King, Ya-Chin 和 Chrong-Jung Lin

2025 International Conference on Solid State Devices and Materials (Pacifico Yokohama, Japan, 15/09/2025–18/09/2025)

DOI: https://doi.org/10.7567/SSDM.2025.E-4-02

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題名: Characterization and Modeling of 16nm FinFET 3D Stackable Via RRAM
創作者：: Wei-Hwa Lin (作者)
Tsung-Pei Yang (作者)
Kai-Ching Chuang (作者)
Howard Tseng
Tassa Yang (作者)
Sung-Po Liao (作者)
Tim Chung (作者)
King, Ya-Chin (作者)
Chrong-Jung Lin - 國立清華大學, 半導體研究學院
會議: 2025 International Conference on Solid State Devices and Materials (Pacifico Yokohama, Japan, 15/09/2025–18/09/2025)
學術資源類型: 會議論文