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Characterization of ArF immersion process for production
Conference paper

Characterization of ArF immersion process for production

Jeng-Horng Chen, Li-Jui Chen, Tun-Ying Fang, Tzung-Chi Fu, Lin-Hung Shiu, Yao-Te Huang, Norman Chen, Da-Chun Oweyang, Ming-Che Wu, Shih-Che Wang, …
Proceedings of SPIE - The International Society for Optical Engineering, Vol.5754(PART 1), pp.13-22
2005
DOI: https://doi.org/10.1117/12.602025
Appears in  keyword about Physics

Abstract

193 nm 65 nm 90 nm ArF lithography Bubbles Defects Immersion lithography Immersion scanner Electronic Optical and Magnetic Materials Condensed Matter Physics Computer Science Applications Applied Mathematics Electrical and Electronic Engineering
ArF immersion lithography is essential to extend optical lithography. In this study, we characterized the immersion process on production wafers. Key lithographic manufacturing parameters, overlay, CD uniformity, depth of focus (DOF), optical proximity effects (OPE), and defects are reported. Similar device electrical performance between the immersion and the dry wafers assures electrical compatibility with immersion lithography. The yield results on 90-nm Static Random Access Memory (SRAM) chips confirm doubling of DOF by immersion as expected. Poly images of the 65-nm node from a 0.85NA immersion scanner are also shown.

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