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Characterization of Pt oxide thin film fabricated by plasma immersion ion implantation
Conference paper

Characterization of Pt oxide thin film fabricated by plasma immersion ion implantation

Yi-Chan Chen, Yu-Ming Sun, Shih-Ying Yu, Chang-Po Hsiung, Jon-Yiew Gan and Chwung-Shan Kou
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol.237(1-2), pp.296-300
08/2005

Abstract

Grazing-incident X-ray diffraction (GIXD) Plasma immersion ion implantation (PIII) X-ray photoemission spectrometry (XPS)
In this article, Pt films treated with oxygen plasma immersion ion implantation were analyzed with the grazing-incident X-ray diffraction and X-ray photoemission spectrometry. Due to the oxygen implantation, an amorphous layer was created under the negative substrate pulses, -2 and -5 kV, applied to the Pt films. The amount of oxygen implanted is substantially higher for the larger substrate pulse applied. The primary Pt binding state in the implanted layer also depends on the substrate pulse; it appears to be PtO and PtO 2 , respectively for -2 and -5 kV of substrate pulse. Upon annealing, appreciable amount of oxygen has escaped from the implanted Pt surface, and oxygen remaining in Pt could be detected only from the sample treated with -5 kV pulse. © 2005 Elsevier B.V. All rights reserved.

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