Characterization of Si-doped GaAs grown by MBE

Conference paper

Characterization of Si-doped GaAs grown by MBE

C. Y. Chang, K. Y. Cheng, Y. H. Wang, W. C. Liu and S. A. Liao

Proc. of 1984 International Electron Devices and Materials Symposium, p.413

1984

Abstract

Si-doped;GaAs;MBE

Related links

Metrics

1 Record Views

Details

Title: Characterization of Si-doped GaAs grown by MBE
Creators - without role: C. Y. Chang
K. Y. Cheng
Y. H. Wang
W. C. Liu
S. A. Liao
Publication Details: Proc. of 1984 International Electron Devices and Materials Symposium, p.413
Identifiers: 9957769500606774
Academic Unit: National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper