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Characterization of radiation damage induced by B and B4 ion implantation into silicon
Conference paper

Characterization of radiation damage induced by B and B4 ion implantation into silicon

J.H. Liang, Y.Z. Chen and C.M. Lin
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol.269(24), pp.3217-3221
12/2011
DOI: https://doi.org/10.1016/j.nimb.2011.04.091
Appears in  keyword about Physics

Abstract

Annealing Cluster ion implantation Junction depth Shallow junction Sheet resistance Transient-enhanced diffusion Instrumentation Nuclear and High Energy Physics
In this study, B1- monomer and B4- cluster ions of the same boron kinetic energy level per atom (20 keV/atom) and total atomic fluence (2 × 10 15 atoms/cm 2 ) were implanted into silicon wafers held at liquid nitrogen temperature (LT, -196 °C), and followed by a two-step furnace annealing together with rapid thermal annealing treatment. The characteristics of radiation damage in both the as-implanted and as-annealed specimens were probed using Raman scattering spectroscopy (RSS) as well as transmission electron microscopy (TEM). Both the RSS and TEM results revealed that heavily-damaged and amorphous structures are formed in the as-implanted B 1 and B 4 specimens, respectively, mainly due to the so-called non-linear damage effect existed in the latter. Furthermore, there is less radiation damage remained in the as-annealed B 4 specimens when compared to the as-annealed B 1 ones, resulting from the occurrence of solid phase epitaxial growth (SPEG) in the amorphous layer of the former which thus causes significant removal of radiation damage. © 2011 Elsevier B.V. All rights reserved.

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