Abstract
A new monitoring device records positive/ negative charging effects in FinFET BEOL plasma processes through polarity direction scheme is first-time proposed. This charge splitting in-situ recorder (CSIR) is composed of separate floating gates to independently detect ion charging and electron charging effects. Through this on-chip charge directing structure, the separation of positive or negative plasma charging in FinFET BEOL processes has been successfully demonstrated. The independent charge level in both polarities reflects more truthfully what a transistor experiences under plasma treatments in fabrication. This new test scheme provides powerful assistance for process optimization and reliability evaluations as CMOS technologies push for finer metal lines in the future.