Abstract
Although enhancement on electrical properties of flash devices with HfAlO charge trapping layer has been reported, there are still serious problems in retention characteristics. In this work, a charge-trapping (CT) flash device with Si 3 N 4 /Hf x Al 1-x O as charge trapping layer is presented. Experimental results show that the program/erase speeds of the proposed devices can be enhanced and the retention characteristic is improved as well. ©2009 IEEE.