Abstract
In this work, using chirped pulse excitation pump-probe technique, we present the results of a study of carrier dynamics modulation in low-temperature-grown GaAs. Increasing carrier relaxation times as varying the excitation chirped conditions from negative to positive is demonstrated and explained by spectral dependence of carrier dynamics in Shockley-Read Hall model. We also indicate that chirped pulse has the feasibility of controlling carrier dynamics in ultrafast optical devices. © 2011 IEEE.