Combined Layout Effect of Protrudent Gate Width and Dummy Diffusion Region on Strained Silicon PMOSFETs

Conference paper

C. C. Lee, C. P. Hsieh, M. H. Liao, S. W. Cheng and Y. H. Guo

12th International Nanotech Symposium & Exhibition (NANO KOREA 2014) 12th International Nanotech Symposium & Exhibition (NANO KOREA 2014)

2014

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Title: Combined Layout Effect of Protrudent Gate Width and Dummy Diffusion Region on Strained Silicon PMOSFETs
Creators - without role: C. C. Lee - 國立清華大學工學院動力機械工程學系
C. P. Hsieh
M. H. Liao
S. W. Cheng
Y. H. Guo
Publication Details: 12th International Nanotech Symposium & Exhibition (NANO KOREA 2014) 12th International Nanotech Symposium & Exhibition (NANO KOREA 2014)
Identifiers: 9957771021006774
Academic Unit: Department of Power Mechanical Engineering, College of Engineering, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper