Abstract
Effects of Si3N4 trapping layer (NTL) and HfO2/Si3N4 bandgap-engineered trapping layer (BETL) on junctionless (JL) polycrystalline-based flash memory devices are investigated in this work. The programming speed is clearly improved by BETL but the erasing speed is only slightly improved. JL device with BETL performs better retention characteristics since the conduction band offset between Si3N4 and HfO2 can reduce the leakage of trapped charges in HfO2. The endurance characteristics of BETL sample is similar to that of NTL one, because both JL devices are less sensitive to interface state generation.